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Plasma surface modification was used to fabricate graphene on the top ofinsulating diamond-like carbon films. It is shown that by a combination ofpulsed argon plasma treatment and thermal annealing at 350\degreeC is possibleto achieve partial crystallization of amorphous carbon to graphene. Theobserved Raman spectra are typical for defected graphene - splitted D- andG-peaks and a broad 2D-peak. This result is very encouraging and we hope thatby improving this technology it will be possible to fabricate defect-freegraphene, which can be used in electronics without transfer to othersubstrates.

Low temperature crystallization of diamond-like carbon films to graphene by low energy plasma surface treatment