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(Ga,Mn)As is at the forefront of research exploring the synergy of magnetismwith the physics and technology of semiconductors, and has led to discoveriesof new spin-dependent phenomena and functionalities applicable to a wide rangeof material systems. Its recognition and utility as an ideal model material forspintronics research has been undermined by the large scatter in reportedsemiconducting doping trends and micromagnetic parameters. In this paper weestablish these basic material characteristics by individually optimizing thehighly non-equilibrium synthesis for each Mn-doping level and by simultaneouslydetermining all micromagnetic parameters from one set of magneto-opticalpump-and-probe measurements. Our (Ga,Mn)As thin-film epilayers, spannig thewide range of accessible dopings, have sharp thermodynamic Curie pointsingularities typical of uniform magnetic systems. The materials showsystematic trends of increasing magnetization, carrier density, and Curietemperature (reaching 188 K) with increasing doping, and monotonous dopingdependence of the Gilbert damping constant of ~0.1-0.01 and the spin stiffnessof ~2-3 meVnm^2. These results render (Ga,Mn)As well controlled degeneratesemiconductor with basic magnetic characteristics comparable to common bandferromagnets.

Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As