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Higher resolution demands for semiconductor lithography may be fulfilled byhigher numerical aperture (NA) systems. However, NAs more than the photoresistrefractive index (~1.7) cause surface confinement of the image. In this letterwe describe how evanescent wave coupling to effective gain medium surfacestates beneath the imaging layer can counter this problem. At {\lambda}=193 nma layer of sapphire on SiO2 counters image decay by an effective-gain-mediumresonance phenomena allowing evanescent interferometric lithography to createhigh aspect ratio structures at NAs of 1.85 (26-nm) and beyond.

Super-resolution Imaging by Evanescent Wave Coupling to Surface States on Effective Gain Media