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Monolayer graphene has been grown on crystallized Cu (111) films on standardoxidized Si 100 mm wafers. The monolayer graphene demonstrates high uniformity(>97% coverage), with immeasurable defects (>95% defect-negligible) across theentire wafer. Key to these results is the phase transition of evaporated copperfilms from amorphous to crystalline at the growth temperature as corroboratedby X-ray diffraction and electron backscatter diffraction. Noticeably, phasetransition of copper film is observed on technologically ubiquitous oxidized Siwafer where the oxide is a standard amorphous thermal oxide. Ion massspectroscopy indicates that the copper films can be purposely hydrogen-enrichedduring a hydrogen anneal which subsequently affords graphene growth with a solecarbonaceous precursor for low defect densities. Owing to the strong hexagonallattice match, the graphene domains align to the Cu (111) domains, suggesting apathway for increasing the graphene grains by maximizing the copper grainsizes. Fabricated graphene transistors on a flexible polyimide film yield apeak carrier mobility ~4,930 cm2/Vs.

Uniform wafer-scale synthesis of graphene on evaporated Cu (111) film with quality comparable to exfoliated monolayer