English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

Usually, graphene is used in its horizontal directions to design novelconcept devices. Here, we report a single electron tunneling diode based onquantum tunneling through a vertical graphene two-barrier junction. Thejunction is formed by positioning a scanning tunnelling microscopy (STM) tipabove a graphene nanoribbon that was deposited on a graphite surface. Becauseof the asymmetry of the two-barrier junction, the electrons can unidirectionaltransfer from the tip to the graphene nanoribbon but not from the graphene tothe tip. This result opens intriguing opportunities for designing new type ofgraphene transistors in its vertical direction.

Experimental realization of single electron tunneling diode based on vertical graphene two-barrier junction