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Typical persistent current ($I_{typ}$) in a normal metal ring with disorderdue to random grain boundaries and rough edges is calculated microscopically.If disorder is due to the rough edges, a ballistic current $I_{typ}\simeq ev_F/L$ is found in spite of the diffusive resistance ($ \propto L/l$), where$v_F$ is the Fermi velocity, $l$ is the mean free path, and $L \gg l$ is thering length. This ballistic current has a simple interpretation: It is due to asingle coherent electron that moves in parallel with the edges and thus doesnot feel the roughness. Our calculations explain a puzzling experimental result$I_{typ}\simeq e v_F/L$, reported by Chandrasekhar et al. [Phys. Rev. Lett. 67,3578 (1991)] for metal rings of length $L \simeq 100 l$. If disorder is due tothe grain boundaries, our results agree with diffusive result $I_{typ}\simeq (ev_F/L) (l/L)$, derived by Cheung et al. [Phys. Rev. Lett. 62, 587 (1989)] andobserved by Bluhm et al. [Phys. Rev. Lett. 102, 136802 (2009)] andBleszynsky-Jayich et al. [Science 326, 272 (2009)].

Ballistic persistent currents in disordered metallic rings: Origin of puzzling experimental values