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This letter describes a new inorganic shadow mask that has been employed forthe evaporation of all-epitaxial Al/Al2O3/Al superconducting tunnel junctions.Organic resists that are commonly used for shadow masks and other lift-offprocesses are not compatible with ultra-high vacuum deposition systems, andthey can break down at even moderately elevated temperatures. The inorganicmask described herein does not suffer these same shortcomings. It wasfabricated from a Ge/Nb bilayer, comprising suspended Nb bridges supported byan undercut Ge sacrificial layer. Utilizing such a bilayer mask on C-planesapphire, the growth of epitaxial Al tunnel junctions was achieved usingmolecular beam epitaxy. Crystalline Al2O3 was grown diffusively at 300 C in amolecular oxygen background of 2.0 utorr, while amorphous oxide was grown atroom temperature and 25 mtorr. A variety of analysis techniques were employedto evaluate the materials, and tunnel junction current-voltage characteristicswere measured at millikelvin temperatures.

Shadow evaporation of epitaxial Al/Al2O3/Al tunnel junctions on sapphire utilizing an inorganic bilayer mask