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Issues of Ge hut cluster nucleation and growth at low temperatures on theGe/Si(001) wetting layer are discussed on the basis of explorations performedby high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Siheterostructures are presented with the focus on low-temperature formation ofperfect multilayer films. Exploration of the photovoltaic effect in Sip--i--n-structures with Ge quantum dots allowed us to propose a new approach todesigning of infrared detectors. First data on THz dynamical conductivity ofGe/Si(001) heterostructures in the temperature interval from 5 to 300 K andmagnetic fields up to 6 T are reported.

Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity