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When the dimension of a solid structure is reduced, there will be twoemerging effects, quantum confinement and surface effect, which dominate atnanoscale. Based on first-principles calculations, we demonstrate that due toan intriguing interplay between these two dominating effects, the topologicaland electronic (topo-electronic) properties of Sb (111) nanofilms undergo aseries of transitions as a function of the reducing film thickness:transforming from a topological semimetal to a topological insulator at 7.8 nm(22 bilayer), then to a quantum spin hall (QSH) phase at 2.7 nm (8 bilayer),and finally to a normal (topological trivial) semiconductor at 1.0 nm (3bilayer). Our theoretical findings for the first time identify the existence ofthe QSH in the Sb (111) nanofilms within a narrow range of thickness andsuggest that the Sb (111) nanofilms provide an ideal test bed for experimentalstudy of topo-electronic phase transitions.

Topo-electronic transitions in Sb(111) nanofilm: the interplay between quantum confinement and surface effect