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Radiation defects generated in various nuclear materials such as Mo and CeO2,used as a surrogate material for UO2, formed by sub-MeV Xe and Kr ionimplantations were studied via TRIM and MD codes. Calculated results werecompared with defect distributions in CeO2 crystals obtained from experimentsby implantation of these ions at the doses of 1\times10^17 ions/cm2 at severaltemperatures. A combination of in situ TEM (Transmission Electron Microscopy)and ex situ TEM experiments on Mo were used to study the evolution of defectclusters during implantation of Xe and Kr ions at energies of 150-700 keV,depending on the experimental conditions. The simulation and irradiation wereperformed on thin film single crystal materials. The formation of defects,dislocations, and solid-state precipitates were studied by simulation andcompared to experiment. Void and bubble formation rates are estimated based ona new mesoscale approach that combines experiment with the kinetic modelsvalidated by atomistic and Ab-initio simulations. Various sets of quantitativeexperimental results were obtained to characterize the dose and temperatureeffects of irradiation. These experimental results include size distributionsof dislocation loops, voids and gas bubble structures created by irradiation.

Simulation of Ion Irradiation of Nuclear Materials and Comparison with Experiment