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The carrier density in tens of nanometers thick graphite samples(multi-layer-graphene, MLG) has been modified by applying a gate voltage($V_g$) perpendicular to the graphene planes. Surface potential microscopyshows inhomogeneities in the carrier density ($n$) in the sample near surfaceregion and under different values of $V_g$ at room temperature. Transportmeasurements on different MLG samples reveal that under a large enough appliedelectric field these regions undergo a superconducting-like transition at $T\lesssim 17$ K. A magnetic field applied parallel or normal to the graphenelayers suppresses the transition without changing appreciably the transitiontemperature.

Possible superconductivity in multi-layer-graphene by application of a gate voltage