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Semiconductor nanowhiskers made of III-V compounds exhibit great potentialfor technological applications. Controlling the growth conditions, such astemperature and diameter, it is possible to alternate between zinc blend andwurtzite crystalline phases, giving origin to the so called polytypism. Thiseffect has great influence in the electronic and optical properties of thesystem, generating new forms of confinement to the carriers. A theoreticalmodel capable to accurately describe electronic and optical properties in thesepolytypical nanostructures can be used to study and develop new kinds ofnanodevices. In this study, we present the development of a wurtzite/zincblendpolytypical model to calculate the electronic band structure of nanowhiskersbased on group theory concepts and the k$\cdot$p method. Although the interestis in polytypical superlattices, the proposed model was applied to a singlequantum well of InP to extract the physics of the wurtzite/zincblendpolytypism. By the analysis of our results, some trends can be predicted:spatial carriers' separation, predominance of perpendicular polarization (xyplane) in the luminescence spectra and interband transition blueshifts withstrain. A possible range of values for the WZ InP spontaneous polarization wassuggested.

Electronic band structure of polytypical nanowhiskers: a theoretical approach based on group theory and k$\cdot$p method