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A chemical etching method was developed for (110) and (001) NdGaO3 singlecrystal substrates in order to obtain an atomically flat GaO2-x - terminatedsurface. Depending on the surface step density the substrates were etched inpH-controlled NH4F- or NH4Cl-based solutions, followed by an annealing step attemperatures of 800-1000oC, in air or in oxygen flow, in order to recrystallizethe surface. Atomic Force Microscopy (AFM) and high-pressure Reflection HighEnergy Electron Diffraction (RHEED) were used to analyse the surface morphologyof the samples after every treatment. Studies on the chemistry andcharacteristics of the terminating layer showed that the chemically etchedNdGaO3 substrate surface has a GaO2-x termination and that the (110) and (001)NdGaO3 surfaces are characterized by a different free surface energy, which islower for latter.

Termination control of NdGaO3 crystal surfaces by selective chemical etching