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We investigate the long wavelength (1.2 to 1.55 micro-m) photoluminescence ofhigh-density InAs quantum dots and dashes, which were grown on InP substrates.We analyze the temperature dependence of the recombination and carrierdistribution on the alloy composition of the barrier materials, InGaAlAs, andon the existence of a wetting layer. Carrier escape and transfer are discussedbased on temperature dependent photoluminescence measurements and theoreticalconsiderations about the heterostructures' confinement energies and bandstructure. We propose two different contributions to the thermal quenching,which can explain the observations for both the quantum dot and dash samples.Among these one is a unique phenomenon for high density quantum dot/dashensembles which is related to significant inter-dot/dash coupling. With thegoal ahead to use these dots and dashes for quantum optical applications on thesingle-dot/dash level in the telecommunication C band as well as at elevatedtemperatures we present first steps towards the realization of such devices.

Telecommunication band InAs quantum dots and dashes embedded in different barrier materials