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In this work, the structural and transport properties of(Nd0.7-xLax)Sr0.3MnO3 manganites with x = 0, 0.1 and 0.2 prepared by solidstate reaction route are studied. These compounds are found to be crystallizedin orthorhombic structural form. The influence of La substitution in place ofNd at A-site shifts the metal to semiconductor/insulator transition temperature(TMI) peak towards room temperature with x = 0, 0.1 and 0.2. A compositionprepared with the value of x = 0.2 in (Nd0.7-xLax)0.7Sr0.3MnO3 manganites (i.e.(Nd0.5La0.2)0.7Sr0.3MnO3), TMI was observed at 289 K which is close to roomtemperature. The maximum percentage of TCR values of compounds are increasingwith average radius <r_A> but %TCR are slightly equal in x = 0.1 and 0.2 ascompared to the parent compound. The maximum %TCR value is almost independentwith A-site average radius <r_A> in x = 0.1 and 0.2. The electrical resistivitydata are explored by different theoretical models and it has been concludedthat at low temperature (ferromagnetic metallic region) conduction mechanismpresumably due to the combined effect of electron-electron, electron-phonon andelectron-magnon scattering, while in paramagnetic semiconducting regime, thevariation of resistivity with temperature are explained by (1) Mott variablerange hopping mechanism, (2) Adiabatic small polaron hopping and (3) Thermallyactivated hopping. The polaron hopping and thermal activation energies aredecreasing with increase of an average A-site ionic radius (<rA>). Anappropriate enlightenment for the observed behavior is discussed in detail.

Effect of internal chemical pressure on transport properties and TCR for sensors applications