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In this paper, a detailed analysis of anisotropic effects on the phononinduced spin relaxation rate in III-V semiconductor quantum dots (QDs) iscarried out. We show that the accidental degeneracy due to level crossingbetween the first and second excited states of opposite electron spin states inboth isotropic and anisotropic QDs can be manipulated with the application ofexternally applied gate potentials. In particular, anisotropic gate potentialsenhance the phonon mediated spin-flip rate and reduce the cusp-like structureto lower magnetic fields, in addition to the lower QDs radii in III-Vsemiconductor QDs. In InAs QDs, only the Rashba spin-orbit coupling contributesto the phonon induced spin relaxation rate. However, for GaAs QDs, the Rashbaspin-orbit coupling has a contribution near the accidental degeneracy point andthe Dresselhaus spin-orbit coupling has a contribution below and above theaccidental degeneracy point in the manipulation of phonon induced spinrelaxation rates in QDs.

Anisotropic effects and phonon induced spin relaxation in gate-controlled semiconductor quantum dots