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The processes of hole localization in double-doped PbWO_4:Mo,La andPbWO_4:Mo,Y single crystals have been studied by continuous wave and pulseelectron spin resonance (ESR) and thermally stimulated luminescence (TSL)methods. We show that the holes created by the UV irradiation are preferablytrapped at lattice oxygen ions in the vicinity of perturbing defects such aslead vacancies, impurity ions (La, Y, Mo), and other lattice imperfections.This leads to a variety of O^- centers, which differ both by thermal stability(from about 170 K up to 240 K) and ESR parameters. The hole centers of thistype were not observed neither in PbWO_4:Mo nor in PbWO_4:La(Y) crystals. Therecombination processes of thermally released holes with electrons stored atdifferent traps, including Pb^+ - WO_3 and (MoO_4)^3- centers, aresystematically studied by TSL. Thermal stability parameters are defined by ESRand TSL techniques for different O^- type defects.

ESR and TSL study of hole capture in PbWO_4:Mo,La and PbWO_4:Mo,Y scintillator crystals