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New losses mechanism in monolayer graphene nanoresonators caused bydissipative intravalley currents stipulated by the synthetic electric fields isconsidered. These fields are generated by time-dependent gauge fields arisingin graphene membrane due to its intrinsic out-of- plain distortions and theinfluence of the external periodic electromotive force. This losses mechanismaccounts for essential part (about 40 percents) of losses in graphenenanoresonator and is specific just for graphene.  The ways of the minimization of this kind of dissipation (increase of thequality factor of the electromechanical system) are discussed. It is explainedwhy one can increase quality factor by correctly chosen combination of strains(by strain engineering). Besides, it is shown that quality factor can beincreased by switching on a magnetic field perpendicular to graphene membrane.

New Losses Mechanism in Graphene Nanoresonators due to the Synthetic Electric Fields caused by Inherent Out-of-Plain Membrane Corrugations