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High-frequency performance of graphene field-effect transistors (GFETs) withboron-nitride gate dielectrics is investigated. Devices show saturating IVcharacteristics and fmax values as high as 34 GHz at 600-nm channel length.Bias dependence of fT and fmax and the effect of the ambipolar channel ontransconductance and output resistance are also examined.

High-frequency performance of graphene field effect transistors with saturating IV-characteristics