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In this letter, we show that a superconducting two-dimensional electron gasis formed at the LaTiO3/SrTiO3 interface whose transition temperature can bemodulated by a back-gate voltage. The gas consists of two types of carriers : amajority of low-mobility carriers always present, and a few high-mobility onesthat can be injected by electrostatic doping. The calculation of the electronsspatial distribution in the confinement potential shows that the high-mobilityelectrons responsible for superconductivity set at the edge of the gas whoseextension can be tuned by field effect.

Two-dimensional superconductivity induced by high-mobility carrier doping in LaTiO3/SrTiO3 hetero-structures