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Resistance Random Access Memory (RRAMTM) device, with its electricallyinduced nanoscale resistive switching capacity, has been gaining considerableattention as future non-volatile memory device. Here, we propose a mechanism ofswitching based on oxygen vacancy migration-driven change in electronicproperties of the transition metal oxide (TMO) film stimulated by set pulsevoltages. We used density functional theory (DFT)-based calculations to accountfor the effect of oxygen vacancy and its migration on the electronic propertiesof HfO2 and Ta/HfO2 systems, and thereby create the entire story on RRAMTM'sswitching mechanism. Computational results on the activation energy barrier foroxygen vacancy migration were found to be consistent with the results of setand reset pulse voltage obtained from experiment. Understanding of thismechanism would be beneficial to effectively realize materials design in thesedevices.

Realization of the Switching Mechanism in Resistance Random Access  Memory (RRAMTM) Devices: Structural and Electronic Properties Affecting  Electron Conductivity in Halfnium Oxide-Electrode System through First  Principles Calculations