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High frequency operation of tunneling real-space transfer transistor (TRSTT)in the negative differential resistance (NDR) regime is assessed by calculatingthe device common source unity current gain frequency (fT) range with a smallsignal equivalent circuit model including tunneling. Our circuit model is basedon an In0.2Ga0.8As and delta-doped GaAs dual channel structure with variousgate lengths. The calculated TRSTT fT agrees very well with experimental data,limiting factor being the resistance of the delta-doped GaAs layer. Byoptimizing the gate dimensions and channel materials, we find fT in the NDRregion approaches terahertz range, which anticipates potential use of TRSTT asterahertz sources.

Circuit Modeling of Tunneling Real-Space Transfer Transistors: Toward Terahertz Frequency Operation