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This paper is about a new manufacturing process aimed at developing stableSiO2/Si3N4 patterned electrets using a Deep Reactive Ion Etching (DRIE) stepfor an application in electret Vibration Energy Harvesters (VEH). Electretscharged by a positive corona discharge show excellent stability with highsurface charge density that can reach 5mC/m^{2} on 1.1\mum-thick layers, evenwith fine patterning (down to 25\mum) and harsh temperature conditions (up to250{\deg}C), paving the way to new electret VEH designs and manufacturingprocesses.

Short Communication: Stable DRIE-patterned SiO2/Si3N4 electrets for electret-based vibration energy harvesters