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We have analysed spin relaxation behaviour of various II-VI semiconductorsfor nanowire structure and 2-D channel by simulating spin polarized transportthrough a semi-classical approach. Monte Carlo simulation method has beenapplied to simulate our model. D'yakanov-Perel mechanism and Elliot-Yafetmechanism are dominant for spin relaxation in II-VI semiconductors. Variationin spin relaxation length with external field has been analysed and comparisonis drawn between nanowire and 2-D channels. Spin relaxation lengths of variousII-VI semiconductors are compared at an external field of 1kV/cm to understandthe predominant factors affecting spin de-phasing in them. Among the manyresults obtained, most noticeable one is that spin relaxation length innanowires is many times greater than that in 2-D channel.

Monte Carlo simulation of spin relaxation in nanowires and 2-D channels of II-VI semiconductors