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We simulated spin polarized transport of electrons along III-V nanowires andtwo dimensional III-V channels using semi classical Monte Carlo method.Properties of spin relaxation length have been investigated in different III-Vzinc-blende materials at various conditions, such as, temperature, externalfield etc. Spin dephasing in III-V channels is caused due to D'yakonov-Perel(DP) relaxation and due to Elliott-Yafet (EY) relaxation. Spin dephasing lengthin nanowire is found to be greater than that in 2-D channel.

Monte Carlo simulation of spin polarized transport in nanowires and 2-D channels of III-V semiconductors