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Based on diffusion-drift approximation a version of analytic compact modelfor large-area double-gate graphene field-effect transistor is presented. Asparts of the model, the electrostatics of double-gate structure is describedand a unified phenomenological approach for modeling of the two drain currentsaturation modes is proposed.

Physics-Based Compact Modeling of Double-Gate Graphene Field-Effect Transistor Operation Including Description of Two Saturation Modes