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The Pixel Detector (PXD) of the Belle II experiment at superKEKB acceleratorin Japan is based in the DEPFET technology. Two layers of 8+12 modules at aradius of 13 and 22 mm will give a spatial resolution below 10 mm. Theradiation level expected in the first layer in ten years of operation is about10 MRad of total ionizing dose. In order to study the tolerance of the DEPFETtechnology sixty devices were irradiated using a standard procedure like 60Cogamma source. Different doping types, channel sizes and biasing conditions werestudied

Irradiation of DEPFET-like transistors with Co-60 gamma source up to 10 MRad