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Using 2-D self-consistent ballistic quantum transport simulations, weinvestigate the short-channel behavior of graphene field-effect transistors andits impact on the device transconductance and subsequently the intrinsiccut-off frequency (fT). Although with thin oxides, fT expectedly scalesinversely with the gate length, significant band-to-band tunneling at OFF stateleads to a departure from this trend in case of thick oxides. We also examinethe effect of achieving better electrostatics at the cost of increased gatecapacitance and illustrate that this can indeed degrade the fT. Theseconsiderations should be implicit in the optimization of graphene transistorsfor high-frequency applications.

Intrinsic Cut-off Frequency in Scaled Graphene Transistors