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We study the phase stability, mechanical, electronic, optical properties andVicker's hardness of the newly predicted layered compound V4SiC3 using thefirst-principles method. This hypothetical compound is found to possess higherbulk modulus as well as higher hardness than those of a similar V4AlC3. TheMulliken bond population analysis indicates that the substitution of Al atomwith the Si atom increases the Vicker's hardness of this compound. Theelectronic band structure shows that the conductivity is metallic and the maincontribution comes from V 3d states. The partial density of states (PDOS) showsthat the hybridization peak of V 3d and C 2s lies lower in energy than that ofV 3d and Si 3p states which suggests that the V 3d - C 2s bond is stronger thanthe V 3d - Si 3p bond. The results are consistent with our bond analysis.Further we have discussed the origin of the features that appear in the opticalproperties. V4SiC3 is seen as a promising dielectric material showing a muchbetter candidate material as a coating to avoid solar heating than those ofV4AlC3, {\alpha}-Nb4SiC3 and Ti4AlN3 compounds.  Keywords: MAX phase V4SiC3; Phase stability; Electronic properties; Opticalproperties; Vicker's hardness.  PACS: 61.66.Fn, 62.20.-x, 62.20.Dc, 71.15Mb, 78.20.Ci

Phase stability and physical properties of hypothetical V4SiC3