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We report a theoretical investigation on the conductance and its fluctuationof three-dimensional topological insulators (3D TI) in $Bi_2Se_3$ and$Sb_2Te_3$ in the presence of disorders. Extensive numerical simulations arecarried out. We find that in the diffusive regime the conductance is quantizedwith fractional value. Importantly, the conductance fluctuation is alsoquantized with a universal value. For 3D TI connected by two terminals, threeindependent conductances $G_{zz}$, $G_{xx}$ and $G_{zx}$ are identified where zis the normal direction of quintuple layer of 3D TI (see inset of Fig.1). Thequantized conductance are found to be $<G_{zz}>=1$, $<G_{xx}>=4/3$ and$<G_{zx}>=6/5$ with corresponding quantized conductance fluctuation 0.54, 0.47,and 0.50. The quantization of average conductance and its fluctuation can beunderstood by theory of mode mixing. The experimental realization that canobserve the quantization of average conductance is discussed.

Disorder induced quantized conductance with fractional value and universal conductance fluctuation in three-dimensional topological insulators