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In this work, we report the simulation of C4+ irradiation and its significanteffects towards the enhancement of the critical current density inBaFe1.9Ni0.1As2 single crystals. BaFe1.9Ni0.1As2 single crystals with andwithout the C-implantation were characterized by magneto-transport and magneticmeasurements up to 13 T over a wide range of temperatures below and above thesuperconducting critical temperature, Tc. It is found that the C-implantationcauses little change in Tc, but it can greatly enhance the in-field criticalcurrent density by a factor of up to 1.5 with enhanced flux jumping at 2 K. OurMonte Carlo simulation results show that all the C ions end up in a welldefined layer, causing extended defects and vacancies at the layer, but fewdefects elsewhere on the implantation paths. This type of defect distributionis distinct from the columnar defects produced by heavy ion implantation.Furthermore, the normal state resistivity is enhanced by the light C4+irradiation, while the upper critical field, Hc2, the irreversibility field,Hirr, and Tc were affected very little.

Simulation of light C4+ ion irradiation and its significant enhancement to the critical current density in BaFe1.9Ni0.1As2 single crystals