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This paper describes the design of a differential class-E PA for Bluetoothapplications in 0.18um CMOS technology with load mismatch protection and powercontrol features. The breakdown induced by load mismatch can be avoided byattenuating the RF power to the final stage during over voltage conditions.Power control is realized by means of "open loop" techniques to regulate thepower supply voltage, and a novel controllable bias network with temperaturecompensated is proposed, which allows a moderate power control slope (dB/V) tobe achieved. Post-layout Simulation results show that the level of output powercan be controlled in 2dBm steps; especially the output power in every step isquite insensitive to temperature variations.

A Novel VSWR-Protected and Controllable CMOS Class E Power Amplifier for Bluetooth Applications