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The FeSe samples in the form of polycrystals, single crystals and thin filmshave been prepared and characterized. The synthesized material has been hotisostatically pressed under pressure of 0.45 GPa of 5N purity argon with theuse of the high gas pressure trap system (HGPTS). Thin films have beenfabricated by the mixed procedures with the use of DC sputtering from varioustypes of targets and processed employing the HGPTS. The used HGPTS assures afull separation of the active volume for synthesis or crystal growth ofmaterial and the inert gas medium. The obtained FeSe0.88 samples have Tcbetween 8 and 12 K. The samples have been characterized by SEM, EDX, XRD,magnetic susceptibility and resistivity measurements.

Synthesis, Crystal Growth and Epitaxial Layer Deposition of FeSe0.88  Superconductor and Other Poison Materials by Use of High Gas Pressure Trap  System