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The magneto-electric properties of resonant tunneling double barrierstructures using GaMnAs for the quantum well is investigated within aself-consistent Green's function approach and a tight-binding electronicstructure model. The magnetic state of the well is determined self-consistentlyby the tunneling current which controls the hole spin density and, hence, thedegree of exchange splitting of the subbands inside the well. Prompted byrecent experiments we compare model systems of increasing defect concentration(substitutional disorder) regarding their I-V curve, magnetic state, and spinpolarization. We predict that, near resonance, the ferromagnetic order whichmay be present at zero bias in the GaMnAs well tends to be destroyed. Resonancepeaks are found to be more sensitive to disorder than ferromagnetic orderingand spin polarization of the steady-state current.

Bias-induced destruction of ferromagnetism and disorder effects in GaMnAs heterostructures