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We successfully tuned an underdoped ultrathin YBa2Cu3O7-x film into theoverdoped regime by means of electrostatic doping using an ionic liquid as adielectric material. This process proved to be reversible. Transportmeasurements showed a series of anomalous features compared to chemically dopedbulk samples and a different two-step doping mechanism for electrostatic dopingwas revealed. The normal resistance increased with carrier concentration on theoverdoped side and the high temperature (180 K) Hall number peaked at a dopinglevel of p$\sim$0.15. These anomalous behaviors suggest that there is anelectronic phase transition in the Fermi surface around the optimal dopinglevel.

Indications of an Electronic Phase Transition in 2D YBa2Cu3O7-x Induced by Electrostatic Doping