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We report on an extensive structural and electrical characterization ofunder-gate dielectric oxide insulators Al2O3 and HfO2 grown by Atomic LayerDeposition (ALD). We elaborate the ALD growth window for these oxides, findingthat the 40-100 nm thick layers of both oxides exhibit fine surface flatnessand required amorphous structure. These layers constitute a base for furthermetallic gate evaporation to complete the Metal-Insulator-Semiconductorstructure. Our best devices survive energizing up to ~3 MV/cm at 77 K with theleakage current staying below the state-of-the-art level of 1 nA. At theseconditions the displaced charge corresponds to a change of the sheet carrierdensity of 3 \times 1013 cm-2, what promises an effective modulation of themicromagnetic properties in diluted ferromagnetic semiconductors.

Properties and characterization of ALD grown dielectric oxides for MIS structures