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We report on the structural, electrical and magnetic properties of ZnCoO thinfilms grown by Atomic Layer Deposition (ALD) method using reactive organicprecursors of zinc and cobalt. As a zinc precursor we applied eitherdimethylzinc or diethylzinc and cobalt (II) acetyloacetonate as a cobaltprecursor. The use of these precursors allowed us the significant reduction ofa growth temperature to 300oC and below, which proved to be very important forthe growth of uniform films of ZnCoO. Structural, electrical and magneticproperties of the obtained ZnCoO layers will be discussed based on the resultsof SIMS, SEM, EDS, XRD, AFM, Hall effect and SQUID investigations.

ZnCoO Films by Atomic Layer Deposition - influence of a growth temperature on uniformity of cobalt distribution