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The appearance and evolution of an anomalous conductance plateau at 0.4 (inunits of 2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in thepresence of lateral spin-orbit coupling, has been studied at T=4.2K as afunction of the potential asymmetry between the in-plane gates of the QPC. Theanomalous plateau, a signature of spin polarization in the channel, appearsonly over an intermediate range (around 3 V) of bias asymmetry. It is quiterobust, being observed over a maximum range of nearly 1V of the sweep voltagecommon to the two in-plane gates. Our conductance measurements show evidence ofsurface roughness scattering from the side walls of the QPC. We show that astrong perpendicular magnetic field leads to magnetic confinement in thechannel which reduces the importance of scattering from the side walls andfavors the onset of near ballistic transport through the QPC.

Anamolous conductance plateau in an asymmetrically biased InAs/InAlAs quantum point contact