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Growth of catalyst-free AlxGa1-xN (0.15<x<0.50)/GaN nanowires by plasmaassisted molecular beam epitaxy is thoroughly structural and chemical analyzedby using transmission electron microscopy related techniques. We found thatwell-defined and defect-free core-shell structures are spontaneously formedduring the wire growth. An Al-rich shell with significantly higher Alcomposition pseudomorphically encapsulates a Ga-rich AlxGa1-xN core with anatomically-abrupt hetero-interface. Nevertheless, the energy dispersive X-Rayspectroscopy reveals a complex chemical composition gradient along the wireaxis for both core and shell blocks which is ascribed to the adatom surfacekinetic differences and the shadow effect during the growth.

Spontaneous formation of well-defined Al rich shell structures in AlxGa1-xN/GaN nanowires