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Percolation phenomena are investigated and discussed in three kinds ofnanostructures: first two are nanocrystalline silicon-based systems, Sinanodots embedded in amorphous SiO2 matrix and porous silicon formed by anoxidized nanowire network, and the third consisting of a multi-walled carbonnanotube network embedded in amorphous SiN. The current-voltage characteristicsmeasured on first two systems present voltage percolation thresholds with thesame shape - a saturation plateau region of the current, followed by an abruptincrease. The current-voltage and conductance-voltage curves measured onmulti-walled carbon nanotube network embedded in amorphous SiN presentnon-periodic and temperature independent oscillations. These oscillations areinterpreted as voltage percolation thresholds.

Voltage percolation thresholds evidenced in the electrical behaviour of different nanostructures