English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Here we report the results of an investigation into the effects of ionizingradiation on commercial-off-the-shelf InGaAs and Si photodiodes. Thephotodiodes were exposed to 30, 52, and 98 MeV protons with fluences rangingfrom 10^8 - 5x10^11 protons/cm^2 at the Indiana University Cyclotron Facility.We tested the photodiodes for changes to their dark current and their relativeresponsivity as a function of wavelength. The Si photodiodes showed increasingdamage to their responsivity with increasing fluence; the InGaAs photodiodesshowed significantly increased dark current as the fluence increased. Inaddition, we monitored the absolute responsivity of the InGaAs photodiodes overtheir entire bandpass. Our measurements showed no evidence for broadbanddegradation or graying of the response at the fluences tested. All measurementsin this investigation were made relative to detectors traceable to NISTstandards.

Radiation hardness studies of InGaAs and Si photodiodes at 30, 52, & 98 MeV and fluences to 5x10^11 protons/cm^2