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Optical and electrical characteristics of AlGaAs lasers with separateconfinement heterostructures are modeled by using Synopsys's Sentaurus TCAD andopen source software for semi-automatic data analysis of large collections ofdata. The effects of doping in all laser layers are investigated with the aimto achieve optimal characteristics of the devise. The results are compared withthese obtained for real lasers produced at Polyus research institute in Moscow,showing that a significant improvement can be achieved, in particular anincrease in optical efficiency (up to over 70 %) by careful control of type andlevel of doping through out the entire structure.

Doping effects in AlGaAs lasers with separate confinement  heterostructures (SCH). Modeling optical and electrical characteristics with  Sentaurus TCAD