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The influences of Si sheet doping levels on the properties of InAs/GaAsquantum dots (QDs) are investigated by atomic force microscopy (AFM) andphotoluminescence (PL). AFM measurements reveal that Si sheet doping doesn'tchange the morphology of InAs QDs. Conductive AFM exhibits a quick currentdecrease when the Si doping density reaches 5\times1011cm-2. PL measurementsshow that the Si doping can significantly enhance the PL intensity. The PL peakintensity of InAs QDs doped to 5\times1011cm-2 is increased about thirty-fivetimes from that of the undoped ones at 300K. The results observed here can beexplained by a supposed positive-charged, strain-relaxed Si-doped thin InAslayer inside the InAs QDs.

Influences of Si sheet doping densities on the morphological, conductive and optical characteristics of InAs/GaAs quantum dots