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Artificially ordered Ge quantum dot (QD) arrays, where confined carriers caninteract via exchange coupling, may create unique functionalities such ascluster qubits and spintronic bandgap systems. Development of such arrays forquantum computing requires fine control over QD size and spatial arrangement onthe sub-35 nm length scale. We employ fine-probe electron-beam irradiation tolocally decompose ambient hydrocarbons onto a bare Si (001) surface. Thesecarbonaceous patterns are annealed in UHV, forming ordered arrays of nanoscaleSiC precipitates that serve as templates for subsequent Ge quantum dotself-assembly during heteroepitaxy. This templating approach has so farproduced interdot spacings down to 22.5 nm, and smaller spacings should bepossible. We investigate the templated feature evolution during UHV processingto identify key mechanisms that must be controlled in order to preserve patternfidelity and reduce broadening of the quantum dot size distribution. A keyfinding is that the presence of a small background of excess carbon reduces Gesurface diffusion, thereby suppressing coarsening to relatively hightemperatures. In fact, coarsening of the carbonaceous nanodot template prior toconversion to SiC can be a more important contributor to size dispersion, andmust be avoided through control of thermal budget.

Mechanisms for directed self-assembly of heteroepitaxial Ge/Si quantum dots with deterministic placement and sub-23nm spacing on SiC nanotemplates