English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

This paper presents a new technique of optical beam-induced scattering ofmid-IR-laser radiation, which is a special mode of the recently developedscanning mid-IR-laser microscopy. The technique in its present form is designedfor investigation of large-scale recombination-active defects in near-surfaceand near-interface regions of semiconductor wafers. However, it can be easilymodified for the defect investigations in the crystal bulk. Being in manyrespects analogous to EBIC, the present technique has some indisputableadvantages, which enable its application for both non-destructive laboratoryinvestigations and quality monitoring in the industry.

Optical beam-induced scattering mode of mid-IR laser microscopy: a  method for defect investigation in near-surface and near-interface regions of  bulk semiconductors