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We studied the angular dependence of anisotropic magnetoresistance (AMR) andPlanar Hall effect (PHE) at various temperatures in high quality epitaxialFe3O4 films grown on MgO(001) substrates. The PHE contains only a twofoldangular dependence, but the AMR below 200K is constituted with both twofold andfourfold symmetric terms. A quantitative fitting based on a phenomenologicalmodel indicates the nonmonotonics temperature dependence of the twofoldcomponent of AMR can be ascribed to the competition between the term and theterm. A unidirectional component was observed in the angular dependent AMR. Thefourfold symmetric AMR also existed for the magnetic field rotating in theplane perpendicular to the current. Our results indicate the AMR and PHE insingle crystalline films have different origins, and also prove that the originof the four-fold symmetry of AMR is related to the lattice symmetry rather thanthe spin scattering near the antiphase boundaries.

Fourfold Symmetry of Anisotropic Magnetoresistance in Epitaxial Fe3O4 Thin Films