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Single-Dirac-cone topological insulators (TI) are the first experimentallydiscovered class of three dimensional topologically ordered electronic systems,and feature robust, massless spin-helical conducting surface states that appearat any interface between a topological insulator and normal matter that lacksthe topological insulator ordering. This topologically defined surfaceenvironment has been theoretically identified as a promising platform forobserving a wide range of new physical phenomena, and possesses idealproperties for advanced electronics such as spin-polarized conductivity andsuppressed scattering. A key missing step in enabling these applications is tounderstand how topologically ordered electrons respond to the interfaces andsurface structures that constitute a device. Here we explore this question byusing the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$)and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type chargetransport regimes to generate a range of topological insulator interfacescenarios that are fundamental to device development. The interplay ofconventional semiconductor junction physics and three dimensional topologicalelectronic order is observed to generate novel junction behaviors that gobeyond the doped-insulator paradigm of conventional semiconductor devices andgreatly alter the known spin-orbit interface phenomenon of Rashba splitting.Our measurements for the first time reveal new classes of diode-likeconfigurations that can create a gap in the interface electron density near atopological Dirac point and systematically modify the topological surface stateDirac velocity, allowing far reaching control of spin-textured helical Diracelectrons inside the interface and creating advantages for TI superconductorsas a Majorana fermion platform over spin-orbit semiconductors.

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)