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Impedance spectroscopy measurements were performed in high quality Vanadiumdioxide (VO2) thin films. This technique allows us investigate the resistiveand capacitive contribution to the dielectric response near the metal-insulatortransition (MIT). A non ideal RC behavior was found in our films from roomtemperature up to 334 K. A decrease of the total capacitance was found in thisregion, possibly due to interface effects. Above the MIT, the system behaveslike a metal as expected, and a modified equivalent circuit is necessary todescribe the impedance data adequately. Around the MIT, an increase of thetotal capacitance is observed.

Evidence for a capacitor network near the metal insulator transition in VO2 thin films probed by in-plane impedance spectroscopy