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A two stream model of boron diffusion in silicon has been developed. Themodel is intended for simulation of transient enhanced diffusion includingredistribution of ion-implanted boron during low temperature annealing. Thefollowing mechanisms of boron diffusion were proposed, namely: the mechanism ofa long-range migration of nonequilibrium boron interstitials and the mechanismdue to the formation, migration, and dissolution of the "impurity atom -silicon self-interstitial" pairs. Based on the model, simulation of theredistribution of boron implanted into silicon substrates for annealingtemperatures of 800 and 900 Celsius degrees was carried out. The calculatedboron concentration profiles agree well with the experimental data. It wasshown that for a temperature of 800 Celsius degrees the transport of impurityatoms occurred due to the long-range migration of nonequilibrium boroninterstitials generated during cluster transformation or dissolution. On theother hand, it was found that at a temperature of 900 Celsius degrees the pairdiffusion mechanism played a main role in the significant transient enhanceddiffusion. A number of parameters describing the transport of nonequilibriumboron interstitials and transient enhanced diffusion of substitutionallydissolved boron atoms were determined. For example, it was found that at atemperature of 900 Celsius degrees the time-average enhancement of borondiffusion was approximately equal to 44 times. The results obtained areimportant for the development of methods of transient enhanced diffusionsuppression keeping in mind the scaling of the dimensions of silicon integratedmicrocircuits.

Change in the microscopic diffusion mechanisms of boron implanted into silicon with increase in the annealing temperature