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We characterize a near-infrared single-photon detector based on an InGaAs/InPavalanche photodiode and the self-differencing post-processing technique. Itoperates at gate rates of 200 MHz and higher. The compact, integrated designemploys printed circuit boards and features a semiconductor-basedself-differencing subtraction implemented with a fully differential amplifier.At a single-photon detection efficiency of 6.4%, the detector has a dark countprobability of 9x10^-7 per gate, an afterpulse probability of 6.3% perdetection event, a detection time jitter of 150 ps, and a dead time of 5 ns(equivalent to one gate period). Furthermore, it can be operated as a standardphotodiode, which benefits applications that require detecting single photonsas well as strong light signals.

Characterization of an InGaAs/InP single-photon detector at 200 MHz gate rate